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d a t a sh eet product speci?cation 2004 feb 18 discrete semiconductors PESDXS2UAT series double esd protection diodes in sot23 package
2004 feb 18 2 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series features unidirectional esd protection of up to two lines common-cathode configuration max. peak pulse power: p pp = 330 w at t p = 8/20 m s low clamping voltage: v (cl)r = 20 v at i pp =18a ultra-low reverse leakage current: i rm < 700 na esd protection > 30 kv iec 61000-4-2; level 4 (esd) iec 61000-4-5 (surge); i pp = 18 a at t p = 8/20 m s. applications computers and peripherals communication systems audio and video equipment data lines can bus protection. description unidirectional double esd protection diodes in common cathode configuration in the sot23 plastic package. designed to protect up to two transmission or data lines against damage from electrostatic discharge (esd) and other transients. marking note 1. * = p : made in hong kong. * = t : made in malaysia. * = w : made in china. quick reference data pinning type number marking code (1) pesd3v3s2uat *7a pesd5v0s2uat *7b pesd12vs2uat *7c pesd15vs2uat *7d pesd24vs2uat *7e symbol parameter value unit v rwm reverse stand-off voltage 3.3, 5, 12, 15 and 24 v c d diode capacitance v r =0v; f = 1 mhz 207, 152, 38, 32 and 23 pf number of protected lines 2 pin description 1 anode 1 2 anode 2 3 common cathode sym002 2 1 3 1 2 001aaa401 3 fig.1 simplified outline (sot23) and symbol.
2004 feb 18 3 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series ordering information limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. non-repetitive current pulse 8/20 m s exponential decay waveform; see fig.2. 2. measured across either pins 1 and 3 or pins 2 and 3. type number package name description version pesd3v3s2uat - plastic surface mounted package; 3 leads sot23 pesd5v0s2uat pesd12vs2uat pesd15vs2uat pesd24vs2uat symbol parameter conditions min. max. unit p pp peak pulse power 8/20 m s pulse; notes 1 and 2 pesd3v3s2uat - 330 w pesd5v0s2uat - 260 w pesd12vs2uat - 180 w pesd15vs2uat - 160 w pesd24vs2uat - 160 w i pp peak pulse current 8/20 m s pulse; notes 1 and 2 pesd3v3s2uat - 18 a pesd5v0s2uat - 15 a pesd12vs2uat - 5a pesd15vs2uat - 5a pesd24vs2uat - 3a t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c
2004 feb 18 4 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series esd maximum ratings notes 1. device stressed with ten non-repetitive esd pulses; see fig.3. 2. measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7. symbol parameter conditions value unit esd electrostatic discharge iec 61000-4-2 (contact discharge); notes 1 and 2 pesd3v3s2uat 30 kv pesd5v0s2uat 30 kv pesd12vs2uat 30 kv pesd15vs2uat 30 kv pesd24vs2uat 23 kv hbm mil-std 883 PESDXS2UAT-series 10 kv esd standards compliance esd standard conditions iec 61000-4-2; level 4 (esd); see fig.3 > 15 kv (air); > 8 kv (contact) hbm mil-std 883; class 3 > 4 kv handbook, halfpage 010 e - t 20 t ( m s) i pp (%) 40 120 0 40 80 30 mle218 100 % i pp ; 8 m s 50 % i pp ; 20 m s fig.2 8/20 m s pulse waveform according to iec 61000-4-5. 001aaa191 i pp 100 % 90 % t 30 ns 60 ns 10 % t r = 0.7 to 1 ns fig.3 electrostatic discharge (esd) pulse waveform according to iec 61000-4-2.
2004 feb 18 5 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series electrical characteristics t j =25 c; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v rwm reverse stand-off voltage pesd3v3s2uat -- 3.3 v pesd5v0s2uat -- 5v pesd12vs2uat -- 12 v pesd15vs2uat -- 15 v pesd24vs2uat -- 24 v i rm reverse leakage current pesd3v3s2uat v rwm = 3.3 v - 0.7 2 m a pesd5v0s2uat v rwm = 5 v - 0.1 1 m a pesd12vs2uat v rwm = 12 v - <1 50 na pesd15vs2uat v rwm = 15 v - <1 50 na pesd24vs2uat v rwm = 24 v - <1 50 na v br breakdown voltage i z = 5 ma pesd3v3s2uat 5.2 5.6 6.0 v pesd5v0s2uat 6.4 6.8 7.2 v pesd12vs2uat 14.7 15.0 15.3 v pesd15vs2uat 17.6 18.0 18.4 v pesd24vs2uat 26.5 27.0 27.5 v c d diode capacitance f = 1 mhz; v r =0v pesd3v3s2uat - 207 300 pf pesd5v0s2uat - 152 200 pf pesd12vs2uat - 38 75 pf pesd15vs2uat - 32 70 pf pesd24vs2uat - 23 50 pf v (cl)r clamping voltage notes 1 and 2 pesd3v3s2uat i pp =1a -- 7v i pp =18a -- 20 v pesd5v0s2uat i pp =1a -- 9v i pp =15a -- 20 v pesd12vs2uat i pp =1a -- 19 v i pp =5a -- 35 v pesd15vs2uat i pp =1a -- 23 v i pp =5a -- 40 v pesd24vs2uat i pp =1a -- 36 v i pp =3a -- 70 v
2004 feb 18 6 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series notes 1. non-repetitive current pulse 8/20 m s exponential decay waveform; see fig.2. 2. measured either across pins 1 and 3 or pins 2 and 3. r diff differential resistance pesd3v3s2uat i r =1ma -- 400 w pesd5v0s2uat i r =1ma -- 80 w pesd12vs2uat i r =1ma -- 200 w pesd15vs2uat i r =1ma -- 225 w pesd24vs2uat i r = 0.5 ma -- 300 w symbol parameter conditions min. typ. max. unit graphical data 001aaa147 10 3 10 2 10 4 p pp (w) 10 t p ( m s) 110 4 10 3 10 10 2 (1) (2) fig.4 peak pulse power dissipation as a function of pulse time; typical values. t amb =25 c. t p = 8/20 m s exponential decay waveform; see fig.2. (1) pesd3v3s2uat and pesd5v0s2uat. (2) pesd12vs2uat, pesd15vs2uat, pesd24vs2uat t j ( c) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 p pp 0 p pp(25?c) fig.5 relative variation of peak pulse power as a function of junction temperature; typical values.
2004 feb 18 7 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series v r (v) 05 4 23 1 001aaa148 120 160 80 200 240 c d (pf) 40 (1) (2) fig.6 diode capacitance as a function of reverse voltage; typical values. t amb = 25 c; f = 1 mhz. (1) pesd3v3s2uat; v rwm = 3.3 v. (2) pesd5v0s2uat; v rwm =5v. v r (v) 025 20 10 15 5 001aaa149 20 30 10 40 50 c d (pf) 0 (1) (3) (2) fig.7 diode capacitance as a function of reverse voltage; typical values. t amb = 25 c; f = 1 mhz. (1) pesd12vs2uat; v rwm =12v. (2) pesd15vs2uat; v rwm =15v. (3) pesd24vs2uat; v rwm =24v.
2004 feb 18 8 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series 001aaa270 1 10 10 - 1 t j ( c) - 100 150 100 050 - 50 i r i r(25?c) (1) fig.8 relative variation of reverse leakage current as a function of junction temperature; typical values. i r is less than 10 na at 150 c for: pesd12v52uat; v rwm =12v. pesd15vs2uat; v rwm =15v. pesd24vs2uat; v rwm =24v. (1) pesd3v3s2uat; v rwm = 3.3 v. pesd5v0s2uat; v rwm =5v.
2004 feb 18 9 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series 001aaa151 450 w 50 w note 1: iec61000-4-2 network c z = 150 pf; r z = 330 w d.u.t.: PESDXS2UAT rg 223/u 50 w coax r z c z esd tester 4 ghz digital oscilloscope 10 attenuator vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 20 v/div horizontal scale = 50 ns/div vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 10 v/div horizontal scale = 50 ns/div gnd gnd gnd gnd gnd gnd gnd unclamped + 1 kv esd voltage waveform (iec61000-4-2 network) clamped + 1 kv esd voltage waveform (iec61000-4-2 network) gnd unclamped - 1 kv esd voltage waveform (iec61000-4-2 network) clamped - 1 kv esd voltage waveform (iec61000-4-2 network) note 1 pesd24vs2uat pesd15vs2uat pesd12vs2uat pesd5v0s2l pesd3v3s2uat fig.9 esd clamping test set-up and waveforms.
2004 feb 18 10 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series application information the PESDXS2UAT series can protect up to two lines against damage caused by unidirectional electrostatic discharge (esd) and surge pulses. the PESDXS2UAT series can protect lines whose signal polarities are below ground. PESDXS2UAT series provide a surge capability of up to 330 watts peak pulse power per line for a 8/20 m s waveform. circuit board layout and protection device placement circuit board layout is critical for the suppression of esd, electrical fast transient (eft) and surge transients. the following guidelines are recommended: 1. place the PESDXS2UAT as close as possible to the input terminal or connector. 2. minimize the path length between the PESDXS2UAT and the protected line. 3. keep parallel signal paths to a minimum. 4. avoid running protected conductors in parallel with unprotected conductors. 5. minimize all printed-circuit board conductive loops including power and ground loops. 6. minimize the length of transient return paths to ground. 7. avoid using shared transient return paths to a common ground point. 8. ground planes should be used whenever possible. 9. use vias for multi-layer printed-circuit boards. 001aaa179 PESDXS2UAT line 1 to be protected unidirectional protection of two lines bidirectional protection of one line line 2 to be protected ground PESDXS2UAT line 1 to be protected ground fig.10 typical application: esd protection of data lines.
2004 feb 18 11 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series package outline unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 97-02-28 99-09-13 iec jedec eiaj mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface mounted package; 3 leads sot23
2004 feb 18 12 philips semiconductors product speci?cation double esd protection diodes in sot23 package PESDXS2UAT series data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2004 sca76 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r76/01/pp 13 date of release: 2004 feb 18 document order number: 9397 750 12247

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